Theory of the electronic structure of Ga1-yInyNxAs1-x and related alloys

E. P. O'Reilly; A. Lindsay

doi:10.1080/08957950008200942

Theory of the electronic structure of Ga_1-yIn_yN_xAs_1-x and related alloys

E. P. O'Reilly
, A. Lindsay

University of Surrey

Research output: Contribution to journal › Article › peer-review

Abstract

We present a quantitative k.P Hamiltonian which describes analytically the composition dependence of the energy gap, interband momentum matrix element, band edge effective masses and conduction band dispersion of GaN_xAS_1-x alloys for low N concentrations (x < ∼0.05). The model has been confirmed using an sp³s* tight-binding Hamiltonian whose results agree well both with experiment and with previous pseudopotential calculations. The model should be of wide use to guide the future development of this material system and its applications.

Original language	English
Pages (from-to)	13-20
Number of pages	8
Journal	High Pressure Research
Volume	18
Issue number	1-6
DOIs	https://doi.org/10.1080/08957950008200942
Publication status	Published - 2000
Externally published	Yes

Keywords

Band structure
GaInNAs
k.P Hamiltonian

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10.1080/08957950008200942

Cite this

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title = "Theory of the electronic structure of Ga1-yInyNxAs1-x and related alloys",

abstract = "We present a quantitative k.P Hamiltonian which describes analytically the composition dependence of the energy gap, interband momentum matrix element, band edge effective masses and conduction band dispersion of GaNxAS1-x alloys for low N concentrations (x < ∼0.05). The model has been confirmed using an sp3s* tight-binding Hamiltonian whose results agree well both with experiment and with previous pseudopotential calculations. The model should be of wide use to guide the future development of this material system and its applications.",

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journal = "High Pressure Research",

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T1 - Theory of the electronic structure of Ga1-yInyNxAs1-x and related alloys

AU - O'Reilly, E. P.

AU - Lindsay, A.

PY - 2000

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N2 - We present a quantitative k.P Hamiltonian which describes analytically the composition dependence of the energy gap, interband momentum matrix element, band edge effective masses and conduction band dispersion of GaNxAS1-x alloys for low N concentrations (x < ∼0.05). The model has been confirmed using an sp3s* tight-binding Hamiltonian whose results agree well both with experiment and with previous pseudopotential calculations. The model should be of wide use to guide the future development of this material system and its applications.

AB - We present a quantitative k.P Hamiltonian which describes analytically the composition dependence of the energy gap, interband momentum matrix element, band edge effective masses and conduction band dispersion of GaNxAS1-x alloys for low N concentrations (x < ∼0.05). The model has been confirmed using an sp3s* tight-binding Hamiltonian whose results agree well both with experiment and with previous pseudopotential calculations. The model should be of wide use to guide the future development of this material system and its applications.

KW - Band structure

KW - GaInNAs

KW - k.P Hamiltonian

UR - https://www.scopus.com/pages/publications/0002276558

U2 - 10.1080/08957950008200942

DO - 10.1080/08957950008200942

M3 - Article

AN - SCOPUS:0002276558

SN - 0895-7959

VL - 18

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JO - High Pressure Research

JF - High Pressure Research

IS - 1-6

ER -

Theory of the electronic structure of Ga_1-yIn_yN_xAs_1-x and related alloys

Abstract

Keywords

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