Thermal stability of nitrogen-doped ZnSe grown by molecular beam epitaxy

Yukie Nishikawa; Masayuki Ishikawa; Peter J. Parbrook; Masaaki Onomura; Shinji Saito; Gen ichi Hatakoshi

doi:10.1016/0022-0248(95)80051-D

Thermal stability of nitrogen-doped ZnSe grown by molecular beam epitaxy

Yukie Nishikawa
, Masayuki Ishikawa
, Peter J. Parbrook
, Masaaki Onomura
, Shinji Saito
, Gen ichi Hatakoshi

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of thermal annealing on nitrogen-doped ZnSe grown by molecular beam epitaxy has been investigated as a function of nitrogen concentration. It was found that thermal stability of the nitrogen acceptors in highly nitrogen-doped ZnSe markedly degraded. Furthermore, in order to avoid significant decreases in net acceptor concentration by thermal annealing, the nitrogen concentration should be kept within the region of high electrical activity, that is below 1 × 10¹⁸ cm⁻³.

Original language	English
Pages (from-to)	807-811
Number of pages	5
Journal	Journal of Crystal Growth
Volume	150
DOIs	https://doi.org/10.1016/0022-0248(95)80051-D
Publication status	Published - 1995
Externally published	Yes

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10.1016/0022-0248(95)80051-D

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title = "Thermal stability of nitrogen-doped ZnSe grown by molecular beam epitaxy",

abstract = "The effect of thermal annealing on nitrogen-doped ZnSe grown by molecular beam epitaxy has been investigated as a function of nitrogen concentration. It was found that thermal stability of the nitrogen acceptors in highly nitrogen-doped ZnSe markedly degraded. Furthermore, in order to avoid significant decreases in net acceptor concentration by thermal annealing, the nitrogen concentration should be kept within the region of high electrical activity, that is below 1 × 1018 cm−3.",

author = "Yukie Nishikawa and Masayuki Ishikawa and \{J. Parbrook\}, Peter and Masaaki Onomura and Shinji Saito and Hatakoshi, \{Gen ichi\}",

year = "1995",

doi = "10.1016/0022-0248(95)80051-D",

language = "English",

volume = "150",

pages = "807--811",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Thermal stability of nitrogen-doped ZnSe grown by molecular beam epitaxy

AU - Nishikawa, Yukie

AU - Ishikawa, Masayuki

AU - J. Parbrook, Peter

AU - Onomura, Masaaki

AU - Saito, Shinji

AU - Hatakoshi, Gen ichi

PY - 1995

Y1 - 1995

N2 - The effect of thermal annealing on nitrogen-doped ZnSe grown by molecular beam epitaxy has been investigated as a function of nitrogen concentration. It was found that thermal stability of the nitrogen acceptors in highly nitrogen-doped ZnSe markedly degraded. Furthermore, in order to avoid significant decreases in net acceptor concentration by thermal annealing, the nitrogen concentration should be kept within the region of high electrical activity, that is below 1 × 1018 cm−3.

AB - The effect of thermal annealing on nitrogen-doped ZnSe grown by molecular beam epitaxy has been investigated as a function of nitrogen concentration. It was found that thermal stability of the nitrogen acceptors in highly nitrogen-doped ZnSe markedly degraded. Furthermore, in order to avoid significant decreases in net acceptor concentration by thermal annealing, the nitrogen concentration should be kept within the region of high electrical activity, that is below 1 × 1018 cm−3.

UR - https://www.scopus.com/pages/publications/0029309109

U2 - 10.1016/0022-0248(95)80051-D

DO - 10.1016/0022-0248(95)80051-D

M3 - Article

AN - SCOPUS:0029309109

SN - 0022-0248

VL - 150

SP - 807

EP - 811

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Thermal stability of nitrogen-doped ZnSe grown by molecular beam epitaxy

Abstract

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