Thermally activated analysis of LaSiOx/Si and GdSiO x/Si structures at cryogenic temperatures

I. P. Tyagulskii; S. I. Tyagulskii; A. N. Nazarov; V. S. Lysenko; K. Cherkaoui; P. K. Hurley

doi:10.1016/j.mee.2013.03.138

Thermally activated analysis of LaSiO_x/Si and GdSiO _x/Si structures at cryogenic temperatures

I. P. Tyagulskii
, S. I. Tyagulskii
, A. N. Nazarov
, V. S. Lysenko
, K. Cherkaoui
, P. K. Hurley

NASU - Institute of Semiconductors Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The paper focuses on an experimental investigation of charge trapping and emission from shallow traps in the transition layer between the oxide and the silicon substrate in LaSiO_x/Si and GdSiO_x/Si structures in the temperature range 6-100 K. The method of thermally activated charge release has been used for determination of the activation energies. Shallow electron traps associated with La and Gd ions have been determined. It was demonstrated that the LaSiO_x/n-Si structure has an inferior quality interface in comparison with the GdSiO_x/n-Si interface that can be associated with additional oxidation of the Si surface before GdSiO_x deposition.

Original language	English
Pages (from-to)	31-34
Number of pages	4
Journal	Microelectronic Engineering
Volume	109
DOIs	https://doi.org/10.1016/j.mee.2013.03.138
Publication status	Published - 2013

Keywords

High-k dielectric
Rare earth silicate
Shallow traps
Thermally stimulated charge release

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10.1016/j.mee.2013.03.138

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@article{346422bc15bb4eeb9e6741f63adfd4b6,

title = "Thermally activated analysis of LaSiOx/Si and GdSiO x/Si structures at cryogenic temperatures",

abstract = "The paper focuses on an experimental investigation of charge trapping and emission from shallow traps in the transition layer between the oxide and the silicon substrate in LaSiOx/Si and GdSiOx/Si structures in the temperature range 6-100 K. The method of thermally activated charge release has been used for determination of the activation energies. Shallow electron traps associated with La and Gd ions have been determined. It was demonstrated that the LaSiOx/n-Si structure has an inferior quality interface in comparison with the GdSiOx/n-Si interface that can be associated with additional oxidation of the Si surface before GdSiOx deposition.",

keywords = "High-k dielectric, Rare earth silicate, Shallow traps, Thermally stimulated charge release",

author = "Tyagulskii, \{I. P.\} and Tyagulskii, \{S. I.\} and Nazarov, \{A. N.\} and Lysenko, \{V. S.\} and K. Cherkaoui and Hurley, \{P. K.\}",

year = "2013",

doi = "10.1016/j.mee.2013.03.138",

language = "English",

volume = "109",

pages = "31--34",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Thermally activated analysis of LaSiOx/Si and GdSiO x/Si structures at cryogenic temperatures

AU - Tyagulskii, I. P.

AU - Tyagulskii, S. I.

AU - Nazarov, A. N.

AU - Lysenko, V. S.

AU - Cherkaoui, K.

AU - Hurley, P. K.

PY - 2013

Y1 - 2013

N2 - The paper focuses on an experimental investigation of charge trapping and emission from shallow traps in the transition layer between the oxide and the silicon substrate in LaSiOx/Si and GdSiOx/Si structures in the temperature range 6-100 K. The method of thermally activated charge release has been used for determination of the activation energies. Shallow electron traps associated with La and Gd ions have been determined. It was demonstrated that the LaSiOx/n-Si structure has an inferior quality interface in comparison with the GdSiOx/n-Si interface that can be associated with additional oxidation of the Si surface before GdSiOx deposition.

AB - The paper focuses on an experimental investigation of charge trapping and emission from shallow traps in the transition layer between the oxide and the silicon substrate in LaSiOx/Si and GdSiOx/Si structures in the temperature range 6-100 K. The method of thermally activated charge release has been used for determination of the activation energies. Shallow electron traps associated with La and Gd ions have been determined. It was demonstrated that the LaSiOx/n-Si structure has an inferior quality interface in comparison with the GdSiOx/n-Si interface that can be associated with additional oxidation of the Si surface before GdSiOx deposition.

KW - High-k dielectric

KW - Rare earth silicate

KW - Shallow traps

KW - Thermally stimulated charge release

UR - https://www.scopus.com/pages/publications/84876713688

U2 - 10.1016/j.mee.2013.03.138

DO - 10.1016/j.mee.2013.03.138

M3 - Article

AN - SCOPUS:84876713688

SN - 0167-9317

VL - 109

SP - 31

EP - 34

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Thermally activated analysis of LaSiO_x/Si and GdSiO _x/Si structures at cryogenic temperatures

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Keywords

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