Thermally driven reversible photoluminescence modulation in WS                         2                         /VO                         2                          heterostructure

Pawan Kumar; Davinder Singh; Viswanath Balakrishnan

doi:10.1016/j.apsusc.2019.03.033

Thermally driven reversible photoluminescence modulation in WS ₂ /VO ₂ heterostructure

Pawan Kumar
, Davinder Singh
, Viswanath Balakrishnan

Indian Institute of Technology Mandi

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate reversible modulation of photoluminescence in chemical vapor deposition (CVD) grown WS ₂ monolayer transferred on VO ₂ thin films that undergo insulator-metal transition. Thermally driven phase transition in VO ₂ thin film involving structural change as well as thermal expansion mismatch at interfaces induce strain and able to reversibly tune photoluminescence (PL) of atomic thin WS ₂ layer. PL intensity is increased with enhancement factor of 1.83 which corresponds to ~250% enhancement when heated from 30 °C to 70 °C. With further increase of temperature, PL intensity is found to be decreasing due to thermal quenching. While interference effect arising from metallic VO ₂ /WS ₂ interface may also contribute for luminescence enhancement in metallic state, the observed increase in photoluminescence intensity during heating within the insulating state reveals the role of thermal strain. Systematic in-situ Raman and PL measurements revealed role of phase transition in controlling the PL intensity of excitons in WS ₂ monolayer. Single crystalline VO ₂ microplates also have been used to confirm the PL intensity modulation across phase transition. The observed direct correlation between photoluminescence and phase change interaction of VO ₂ with atomic thin layer of WS ₂ provide novel platform to tune the optical properties for diverse smart photonic applications.

Original language	English
Pages (from-to)	680-688
Number of pages	9
Journal	Applied Surface Science
Volume	480
DOIs	https://doi.org/10.1016/j.apsusc.2019.03.033
Publication status	Published - 30 Jun 2019
Externally published	Yes

Keywords

In-situ temperature effect
Monolayer WS
Reversible PL modulation
Surfaces and interfaces
VO thin film heterostructure

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10.1016/j.apsusc.2019.03.033

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title = " Thermally driven reversible photoluminescence modulation in WS 2 /VO 2 heterostructure ",

abstract = " We demonstrate reversible modulation of photoluminescence in chemical vapor deposition (CVD) grown WS 2 monolayer transferred on VO 2 thin films that undergo insulator-metal transition. Thermally driven phase transition in VO 2 thin film involving structural change as well as thermal expansion mismatch at interfaces induce strain and able to reversibly tune photoluminescence (PL) of atomic thin WS 2 layer. PL intensity is increased with enhancement factor of 1.83 which corresponds to \textasciitilde{}250\% enhancement when heated from 30 °C to 70 °C. With further increase of temperature, PL intensity is found to be decreasing due to thermal quenching. While interference effect arising from metallic VO 2 /WS 2 interface may also contribute for luminescence enhancement in metallic state, the observed increase in photoluminescence intensity during heating within the insulating state reveals the role of thermal strain. Systematic in-situ Raman and PL measurements revealed role of phase transition in controlling the PL intensity of excitons in WS 2 monolayer. Single crystalline VO 2 microplates also have been used to confirm the PL intensity modulation across phase transition. The observed direct correlation between photoluminescence and phase change interaction of VO 2 with atomic thin layer of WS 2 provide novel platform to tune the optical properties for diverse smart photonic applications.",

keywords = "In-situ temperature effect, Monolayer WS, Reversible PL modulation, Surfaces and interfaces, VO thin film heterostructure",

author = "Pawan Kumar and Davinder Singh and Viswanath Balakrishnan",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = jun,

day = "30",

doi = "10.1016/j.apsusc.2019.03.033",

language = "English",

volume = "480",

pages = "680--688",

journal = "Applied Surface Science",

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Thermally driven reversible photoluminescence modulation in WS ₂ /VO ₂ heterostructure . / Kumar, Pawan; Singh, Davinder; Balakrishnan, Viswanath.
In: Applied Surface Science, Vol. 480, 30.06.2019, p. 680-688.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Thermally driven reversible photoluminescence modulation in WS 2 /VO 2 heterostructure

AU - Kumar, Pawan

AU - Singh, Davinder

AU - Balakrishnan, Viswanath

PY - 2019/6/30

Y1 - 2019/6/30

N2 - We demonstrate reversible modulation of photoluminescence in chemical vapor deposition (CVD) grown WS 2 monolayer transferred on VO 2 thin films that undergo insulator-metal transition. Thermally driven phase transition in VO 2 thin film involving structural change as well as thermal expansion mismatch at interfaces induce strain and able to reversibly tune photoluminescence (PL) of atomic thin WS 2 layer. PL intensity is increased with enhancement factor of 1.83 which corresponds to ~250% enhancement when heated from 30 °C to 70 °C. With further increase of temperature, PL intensity is found to be decreasing due to thermal quenching. While interference effect arising from metallic VO 2 /WS 2 interface may also contribute for luminescence enhancement in metallic state, the observed increase in photoluminescence intensity during heating within the insulating state reveals the role of thermal strain. Systematic in-situ Raman and PL measurements revealed role of phase transition in controlling the PL intensity of excitons in WS 2 monolayer. Single crystalline VO 2 microplates also have been used to confirm the PL intensity modulation across phase transition. The observed direct correlation between photoluminescence and phase change interaction of VO 2 with atomic thin layer of WS 2 provide novel platform to tune the optical properties for diverse smart photonic applications.

AB - We demonstrate reversible modulation of photoluminescence in chemical vapor deposition (CVD) grown WS 2 monolayer transferred on VO 2 thin films that undergo insulator-metal transition. Thermally driven phase transition in VO 2 thin film involving structural change as well as thermal expansion mismatch at interfaces induce strain and able to reversibly tune photoluminescence (PL) of atomic thin WS 2 layer. PL intensity is increased with enhancement factor of 1.83 which corresponds to ~250% enhancement when heated from 30 °C to 70 °C. With further increase of temperature, PL intensity is found to be decreasing due to thermal quenching. While interference effect arising from metallic VO 2 /WS 2 interface may also contribute for luminescence enhancement in metallic state, the observed increase in photoluminescence intensity during heating within the insulating state reveals the role of thermal strain. Systematic in-situ Raman and PL measurements revealed role of phase transition in controlling the PL intensity of excitons in WS 2 monolayer. Single crystalline VO 2 microplates also have been used to confirm the PL intensity modulation across phase transition. The observed direct correlation between photoluminescence and phase change interaction of VO 2 with atomic thin layer of WS 2 provide novel platform to tune the optical properties for diverse smart photonic applications.

KW - In-situ temperature effect

KW - Monolayer WS

KW - Reversible PL modulation

KW - Surfaces and interfaces

KW - VO thin film heterostructure

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DO - 10.1016/j.apsusc.2019.03.033

M3 - Article

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SP - 680

EP - 688

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Thermally driven reversible photoluminescence modulation in WS ₂ /VO ₂ heterostructure

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Keywords

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