Thermionic emission perpendicular to bulk and multiquantum Al xGa1-xInP barriers

J. Ní Chróinín; A. P. Morrison

doi:10.1063/1.2181648

Thermionic emission perpendicular to bulk and multiquantum Al _xGa_1-xInP barriers

J. Ní Chróinín
, A. P. Morrison

School of Engineering and Architecture

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

A study on thermally activated currents across the bulk and multiquantum barrier (MQB) Alx Ga1-x InPGaInP has been carried out and compared to experimental results from a series of n-i-n diodes over a range of temperatures. By considering the true quantum mechanical nature of the barriers, in contrast to the classical Richardson formalism, it is found that the alloy crossover strongly affects the transport properties of the material. The measured prefactor is found to decrease as Al content is increased. When applied to the MQB structures, the existing model fails to capture the experimental results.

Original language	English
Article number	142110
Journal	Applied Physics Letters
Volume	88
Issue number	14
DOIs	https://doi.org/10.1063/1.2181648
Publication status	Published - 3 Apr 2006

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https://hdl.handle.net/10468/4389Licence: CC BY-NC-ND

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abstract = "A study on thermally activated currents across the bulk and multiquantum barrier (MQB) Alx Ga1-x InPGaInP has been carried out and compared to experimental results from a series of n-i-n diodes over a range of temperatures. By considering the true quantum mechanical nature of the barriers, in contrast to the classical Richardson formalism, it is found that the alloy crossover strongly affects the transport properties of the material. The measured prefactor is found to decrease as Al content is increased. When applied to the MQB structures, the existing model fails to capture the experimental results.",

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Thermionic emission perpendicular to bulk and multiquantum Al _xGa_1-xInP barriers

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