Time-and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPE

A. L. Gurskii; I. P. Marko; E. V. Lutsenko; V. N. Pavlovskii; V. Z. Zubialevich; G. P. Yablonskii; B. Schineller; O. Schön; M. Heuken

doi:10.1002/1521-3951(200111)228:2<361::AID-PSSB361>3.0.CO;2-U

Time-and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPE

A. L. Gurskii
, I. P. Marko
, E. V. Lutsenko
, V. N. Pavlovskii
, V. Z. Zubialevich
, G. P. Yablonskii
, B. Schineller
, O. Schön
, M. Heuken

Research output: Contribution to journal › Article › peer-review

Abstract

Time-integrated and time-resolved photoluminescence (PL) spectra as well as the luminescence transients of moderately doped GaN:Mg samples grown by MOVPE were studied between 80 K and 380 K at pulse excitation by a nitrogen laser beam in order to clarify the mechanism of the large blue shift of the 2.8 eV PL band above room temperature. Based on the performed study, the new band at 3.05 eV dominating in PL spectra above room temperature is attributed to the donor-to-valence band recombination. The corresponding donor ionization energy is about 290 meV. The blue shift of the spectra is therefore explained as a result of ionization of shallow acceptor states involved together with deep donors in donor-acceptor recombination forming the 2.8 eV band below room temperature.

Original language	English
Pages (from-to)	361-364
Number of pages	4
Journal	Physica Status Solidi (B): Basic Research
Volume	228
Issue number	2
DOIs	https://doi.org/10.1002/1521-3951(200111)228:2<361::AID-PSSB361>3.0.CO;2-U
Publication status	Published - Nov 2001
Externally published	Yes

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Gurskii, A. L., Marko, I. P., Lutsenko, E. V., Pavlovskii, V. N., Zubialevich, V. Z., Yablonskii, G. P., Schineller, B., Schön, O., & Heuken, M. (2001). Time-and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPE. Physica Status Solidi (B): Basic Research, 228(2), 361-364. https://doi.org/10.1002/1521-3951(200111)228:2<361::AID-PSSB361>3.0.CO;2-U

@article{163817404b2c4456beed3206db20b868,

title = "Time-and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPE",

abstract = "Time-integrated and time-resolved photoluminescence (PL) spectra as well as the luminescence transients of moderately doped GaN:Mg samples grown by MOVPE were studied between 80 K and 380 K at pulse excitation by a nitrogen laser beam in order to clarify the mechanism of the large blue shift of the 2.8 eV PL band above room temperature. Based on the performed study, the new band at 3.05 eV dominating in PL spectra above room temperature is attributed to the donor-to-valence band recombination. The corresponding donor ionization energy is about 290 meV. The blue shift of the spectra is therefore explained as a result of ionization of shallow acceptor states involved together with deep donors in donor-acceptor recombination forming the 2.8 eV band below room temperature.",

author = "Gurskii, \{A. L.\} and Marko, \{I. P.\} and Lutsenko, \{E. V.\} and Pavlovskii, \{V. N.\} and Zubialevich, \{V. Z.\} and Yablonskii, \{G. P.\} and B. Schineller and O. Sch{\"o}n and M. Heuken",

year = "2001",

month = nov,

doi = "10.1002/1521-3951(200111)228:2<361::AID-PSSB361>3.0.CO;2-U",

language = "English",

volume = "228",

pages = "361--364",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc",

number = "2",

}

Gurskii, AL, Marko, IP, Lutsenko, EV, Pavlovskii, VN, Zubialevich, VZ, Yablonskii, GP, Schineller, B, Schön, O & Heuken, M 2001, 'Time-and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPE', Physica Status Solidi (B): Basic Research, vol. 228, no. 2, pp. 361-364. https://doi.org/10.1002/1521-3951(200111)228:2<361::AID-PSSB361>3.0.CO;2-U

TY - JOUR

T1 - Time-and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPE

AU - Gurskii, A. L.

AU - Marko, I. P.

AU - Lutsenko, E. V.

AU - Pavlovskii, V. N.

AU - Zubialevich, V. Z.

AU - Yablonskii, G. P.

AU - Schineller, B.

AU - Schön, O.

AU - Heuken, M.

PY - 2001/11

Y1 - 2001/11

N2 - Time-integrated and time-resolved photoluminescence (PL) spectra as well as the luminescence transients of moderately doped GaN:Mg samples grown by MOVPE were studied between 80 K and 380 K at pulse excitation by a nitrogen laser beam in order to clarify the mechanism of the large blue shift of the 2.8 eV PL band above room temperature. Based on the performed study, the new band at 3.05 eV dominating in PL spectra above room temperature is attributed to the donor-to-valence band recombination. The corresponding donor ionization energy is about 290 meV. The blue shift of the spectra is therefore explained as a result of ionization of shallow acceptor states involved together with deep donors in donor-acceptor recombination forming the 2.8 eV band below room temperature.

AB - Time-integrated and time-resolved photoluminescence (PL) spectra as well as the luminescence transients of moderately doped GaN:Mg samples grown by MOVPE were studied between 80 K and 380 K at pulse excitation by a nitrogen laser beam in order to clarify the mechanism of the large blue shift of the 2.8 eV PL band above room temperature. Based on the performed study, the new band at 3.05 eV dominating in PL spectra above room temperature is attributed to the donor-to-valence band recombination. The corresponding donor ionization energy is about 290 meV. The blue shift of the spectra is therefore explained as a result of ionization of shallow acceptor states involved together with deep donors in donor-acceptor recombination forming the 2.8 eV band below room temperature.

UR - https://www.scopus.com/pages/publications/0035539878

U2 - 10.1002/1521-3951(200111)228:2<361::AID-PSSB361>3.0.CO;2-U

DO - 10.1002/1521-3951(200111)228:2<361::AID-PSSB361>3.0.CO;2-U

M3 - Article

AN - SCOPUS:0035539878

SN - 0370-1972

VL - 228

SP - 361

EP - 364

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 2

ER -

Time-and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPE

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