TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2008.2012356
Publication status	Published - 2009

Access to Document

@article{73f17fae7b5341f8af3518aee04c5584,

title = "TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications",

author = "Ailbe O'Manachain",

year = "2009",

doi = "10.1109/LED.2008.2012356",

language = "Undefined/Unknown",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications

AU - O'Manachain, Ailbe

PY - 2009

Y1 - 2009

UR - https://publons.com/wos-op/publon/11823288/

U2 - 10.1109/LED.2008.2012356

DO - 10.1109/LED.2008.2012356

M3 - Article

SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -