TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

Scott Monaghan; Karim Cherkaoui; Éamon O'Connor; Vladimir Djara; Paul K Hurley; Lars Oberbeck; Eva Tois; L Wilde; Steffen Teichert

TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

Scott Monaghan
, Karim Cherkaoui
, Éamon O'Connor
, Vladimir Djara
, Paul K Hurley
, Lars Oberbeck
, Eva Tois
, L Wilde
, Steffen Teichert

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Electron Device Letters
Publication status	Published - 2009

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Cite this

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title = "TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications",

author = "Scott Monaghan and Karim Cherkaoui and {\'E}amon O'Connor and Vladimir Djara and Hurley, \{Paul K\} and Lars Oberbeck and Eva Tois and L Wilde and Steffen Teichert",

year = "2009",

language = "Undefined/Unknown",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

AU - Monaghan, Scott

AU - Cherkaoui, Karim

AU - O'Connor, Éamon

AU - Djara, Vladimir

AU - Hurley, Paul K

AU - Oberbeck, Lars

AU - Tois, Eva

AU - Wilde, L

AU - Teichert, Steffen

PY - 2009

Y1 - 2009

M3 - Article

SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -