TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications
- Scott Monaghan
- , Karim Cherkaoui
- , Éamon O'Connor
- , Vladimir Djara
- , Paul K. Hurley
- , Lars Oberbeck
- , Eva Tois
- , L. Wilde
- , Steffen Teichert
Research output: Contribution to journal › Article › peer-review