@inbook{ed029d76df174ce59f50fb1988b70c5c,
title = "Top-gated MoS2 capacitors and transistors with high-k dielectrics for interface study",
abstract = "Top-gated MOS capacitors on bulk MoS2 and transistors of few-layer MoS2 were designed and fabricated. They can be potentially utilized on various TMD and high-k materials for fast and robust electrical characterization. The 3-terminal transistor test structure shows advantages of significant reduction of parasitic effects. C-V and I-V measurements were successfully conducted to characterize few-layer MoS2 transistors with sub-10 nm HfO2 dielectric.",
keywords = "capacitor, high-k, interface defects, Molybdenum disulfide (MoS2), top-gated transistor",
author = "Peng Zhao and Angelica Azcatl and Pavel Bolshakov-Barrett and Wallace, \{Robert M.\} and Young, \{Chadwin D.\} and Hurley, \{Paul K.\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 ; Conference date: 28-03-2016 Through 31-03-2016",
year = "2016",
month = may,
day = "20",
doi = "10.1109/ICMTS.2016.7476201",
language = "English",
series = "IEEE International Conference on Microelectronic Test Structures",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "172--175",
booktitle = "2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings",
address = "United States",
}