Toward silicon-based lasers for terahertz sources

  • Stephen A. Lynch
  • , Douglas J. Paul
  • , Paul Townsend
  • , Guy Matmon
  • , Zhang Suet
  • , Robert W. Kelsall
  • , Zoran Ikonic
  • , Paul Harrison
  • , Jing Zhang
  • , David J. Norris
  • , Anthony G. Cullis
  • , Carl R. Pidgeon
  • , Pawel Murzyn
  • , Ben Murdin
  • , Mike Bain
  • , Harry S. Gamble
  • , Ming Zhao
  • , Wei Xin Ni

Research output: Contribution to journalArticlepeer-review

Abstract

Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser.

Original languageEnglish
Pages (from-to)1570-1577
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume12
Issue number6
DOIs
Publication statusPublished - Nov 2006
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 3 - Good Health and Well-being
    SDG 3 Good Health and Well-being

Keywords

  • Boron
  • Far infrared
  • Germanium
  • Impurity
  • Lifetime
  • Phosphorus
  • Pump-probe
  • Quantum cascade laser
  • Resonant tunneling diode (RTD)
  • Silicon
  • Suicide
  • Terahertz
  • Waveguide

Fingerprint

Dive into the research topics of 'Toward silicon-based lasers for terahertz sources'. Together they form a unique fingerprint.

Cite this