@inbook{ef8e4d055f2b4f01b683050a03e62689,
title = "Towards a compact model for MOSFETs with direct tunneling gate dielectrics",
abstract = "A circuit simulation model of a MOSFET with 1.5nm gate oxide is presented. The device characteristics are well described by the model. It also gives useful insight into the flow of current in the device and to the division of current between source and drain. Based on this model a method for the division of gate current between source and drain is proposed for use in the development of a compact MOS model including gate current.",
author = "P. O'Sullivan and A. Fox and McCarthy, \{K. G.\} and A. Mathewson",
year = "1999",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "488--491",
editor = "R.P. Mertens and H. Grunbacher and H.E. Maes and G. Declerck",
booktitle = "ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference",
address = "United States",
note = "29th European Solid-State Device Research Conference, ESSDERC 1999 ; Conference date: 13-09-1999 Through 15-09-1999",
}