Towards Direct Gap Emission in GeSn and GeC: A Hybrid Functional DFT Analysis

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Abstract

We use density functional theory including Heyd Scuseria Ernzerhof (HSE) hybrid functionals to investigate the electronic structure of Ge1-xSnx and Ge1-yCy supercells. The calculations confirm that a direct gap semiconductor can be obtained in the supercell calculations for low tin (x-6%) and carbon (y < 1%) compositions. Further analysis shows strong mixing between Γand L states in the GeSn alloys for x =6.25%, close to the expected crossover between an indirect and direct gap alloy, while the lowest conduction band in the GeC alloys (y∼ 1%) also has significant indirect character.

Original languageEnglish
Title of host publication18th International Conference on Nanotechnology, NANO 2018
PublisherIEEE Computer Society
ISBN (Electronic)9781538653364
DOIs
Publication statusPublished - 2 Jul 2018
Event18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland
Duration: 23 Jul 201826 Jul 2018

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2018-July
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference18th International Conference on Nanotechnology, NANO 2018
Country/TerritoryIreland
CityCork
Period23/07/1826/07/18

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