@inbook{f6cd9782ed3e473e972883b80170b310,
title = "Towards the monolithic integration of III-V compound semiconductors on Si: Selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxy",
abstract = "We report two approaches to integrate high quality III-V templates by epitaxial growth with low defectivity on Si wafers. The first approach is based on blanket, InGaAs-based Strain Relaxed Buffers grown by MOVPE on 200mm Si, and the second on the selective area MOVPE of InP in Shallow Trench Isolation structures patterned on 300mm Si. Both structures are characterized structurally and show the efficient trapping and annihilation of defects propagation from the Si/III-V interface. We believe these two approaches represent viable alternatives towards the realization of CMOS-compatible III-V templates and stacks for high-performance devices monolithically integrated on Si.",
keywords = "high-mobility channels, III-V, MBE, MOVPE",
author = "M. Cantoro and C. Merckling and S. Jiang and W. Guo and N. Waldron and H. Bender and A. Moussa and B. Douhard and W. Vandervorst and Heyns, \{M. M.\} and J. Dekoster and R. Loo and M. Caymax",
year = "2012",
doi = "10.1109/CSICS.2012.6340064",
language = "English",
isbn = "9781467309295",
series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest",
address = "United States",
note = "2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 ; Conference date: 14-10-2012 Through 17-10-2012",
}