Towards the monolithic integration of III-V compound semiconductors on Si: Selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxy
- M. Cantoro
- , C. Merckling
- , S. Jiang
- , W. Guo
- , N. Waldron
- , H. Bender
- , A. Moussa
- , B. Douhard
- , W. Vandervorst
- , M. M. Heyns
- , J. Dekoster
- , R. Loo
- , M. Caymax
- Interuniversitair Micro-Elektronica Centrum
- KU Leuven
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review