Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

We demonstrate the integration of GaAs p-i-n photodiodes onto silicon nitride grating couplers by means of transfer-printing. Dark currents below 20 pA and waveguide-coupled responsivities of 0.30 A/W are obtained. The detectors are integrated with an on-chip near-infrared spectrometer.

Original languageEnglish
Title of host publication2020 IEEE Photonics Conference, IPC 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728158914
DOIs
Publication statusPublished - Sep 2020
Event2020 IEEE Photonics Conference, IPC 2020 - Virtual, Vancouver, Canada
Duration: 28 Sep 20201 Oct 2020

Publication series

Name2020 IEEE Photonics Conference, IPC 2020 - Proceedings

Conference

Conference2020 IEEE Photonics Conference, IPC 2020
Country/TerritoryCanada
CityVirtual, Vancouver
Period28/09/201/10/20

Keywords

  • AWG
  • GaAs
  • photodiode
  • Transfer-printing

Fingerprint

Dive into the research topics of 'Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits'. Together they form a unique fingerprint.

Cite this