TY - JOUR
T1 - Transfer Printing of AlGaInAs/InP Etched Facet Lasers to Si Substrates
AU - Loi, Ruggero
AU - O'Callaghan, James
AU - Roycroft, Brendan
AU - Robert, Cedric
AU - Fecioru, Alin
AU - Trindade, Antonio Jose
AU - Gocalinska, Agnieszka
AU - Pelucchi, Emanuele
AU - Bower, Chris Anthony
AU - Corbett, Brian
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/12
Y1 - 2016/12
N2 - InP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. 500 μm × 60 μm laser coupons are fabricated with a highly dense pitch on the native InP substrate. The laser epitaxial structure contains a 1-μm-thick InGaAs sacrificial layer. A resist anchoring system is used to restrain the devices while they are released by selectively etching the InGaAs layer with FeCl3 :H2O (1:2) at 8 °C. Efficient thermal sinking is achieved by evaporating Ti-Au on the Si target substrate and annealing the printed devices at 300 °C. This integration strategy is particularly relevant for lasers being butt coupled to polymer or silicon-on-insulator (SOI) waveguides.
AB - InP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. 500 μm × 60 μm laser coupons are fabricated with a highly dense pitch on the native InP substrate. The laser epitaxial structure contains a 1-μm-thick InGaAs sacrificial layer. A resist anchoring system is used to restrain the devices while they are released by selectively etching the InGaAs layer with FeCl3 :H2O (1:2) at 8 °C. Efficient thermal sinking is achieved by evaporating Ti-Au on the Si target substrate and annealing the printed devices at 300 °C. This integration strategy is particularly relevant for lasers being butt coupled to polymer or silicon-on-insulator (SOI) waveguides.
KW - fabrication and characterization.
KW - Heterogeneous integration
KW - infrared lasers
KW - optical devices
KW - photonic materials and engineered photonic structures
UR - https://www.scopus.com/pages/publications/85003638111
U2 - 10.1109/JPHOT.2016.2627883
DO - 10.1109/JPHOT.2016.2627883
M3 - Article
AN - SCOPUS:85003638111
SN - 1943-0655
VL - 8
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 6
M1 - 7742401
ER -