Transverse mode measurements in index guided vertical cavity semiconductor lasers

John McInerney; Stephen Hegarty; Guillaume Huyet; Pierpaolo Porta; Kent Choquette; Kent Geib; Hong Hou

Transverse mode measurements in index guided vertical cavity semiconductor lasers

John McInerney
, Stephen Hegarty
, Guillaume Huyet
, Pierpaolo Porta
, Kent Choquette
, Kent Geib
, Hong Hou

School of Physics

University College Cork

Research output: Contribution to conference › Paper › peer-review

Abstract

Vertical cavity surface emitting semiconductor lasers (VCSEL) have many applications in information technology, particularly communications and data storage. VCSELs using oxide confinement have generally low lasing thresholds, high efficiencies and excellent electrical properties. The transverse mode properties can be studied in detail. Recent measurements of transverse modes in oxide confined AlGaAs VCSELs of aperture sizes ranging from 1 to 20 μm square are presented.

Original language	English
Pages	233
Number of pages	1
Publication status	Published - 2000
Event	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: 10 Sep 2000 → 15 Sep 2000

Conference

Conference	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
City	Nice, France
Period	10/09/00 → 15/09/00

Cite this

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title = "Transverse mode measurements in index guided vertical cavity semiconductor lasers",

abstract = "Vertical cavity surface emitting semiconductor lasers (VCSEL) have many applications in information technology, particularly communications and data storage. VCSELs using oxide confinement have generally low lasing thresholds, high efficiencies and excellent electrical properties. The transverse mode properties can be studied in detail. Recent measurements of transverse modes in oxide confined AlGaAs VCSELs of aperture sizes ranging from 1 to 20 μm square are presented.",

author = "John McInerney and Stephen Hegarty and Guillaume Huyet and Pierpaolo Porta and Kent Choquette and Kent Geib and Hong Hou",

year = "2000",

language = "English",

pages = "233",

note = "2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) ; Conference date: 10-09-2000 Through 15-09-2000",

}

TY - CONF

T1 - Transverse mode measurements in index guided vertical cavity semiconductor lasers

AU - McInerney, John

AU - Hegarty, Stephen

AU - Huyet, Guillaume

AU - Porta, Pierpaolo

AU - Choquette, Kent

AU - Geib, Kent

AU - Hou, Hong

PY - 2000

Y1 - 2000

N2 - Vertical cavity surface emitting semiconductor lasers (VCSEL) have many applications in information technology, particularly communications and data storage. VCSELs using oxide confinement have generally low lasing thresholds, high efficiencies and excellent electrical properties. The transverse mode properties can be studied in detail. Recent measurements of transverse modes in oxide confined AlGaAs VCSELs of aperture sizes ranging from 1 to 20 μm square are presented.

AB - Vertical cavity surface emitting semiconductor lasers (VCSEL) have many applications in information technology, particularly communications and data storage. VCSELs using oxide confinement have generally low lasing thresholds, high efficiencies and excellent electrical properties. The transverse mode properties can be studied in detail. Recent measurements of transverse modes in oxide confined AlGaAs VCSELs of aperture sizes ranging from 1 to 20 μm square are presented.

UR - https://www.scopus.com/pages/publications/0033714152

M3 - Paper

AN - SCOPUS:0033714152

SP - 233

T2 - 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)

Y2 - 10 September 2000 through 15 September 2000

ER -

Transverse mode measurements in index guided vertical cavity semiconductor lasers

Abstract

Conference

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