@inbook{61e0b0a1c46543428ccd144b60e87993,
title = "Trap enhanced Ge/Si photodiode formed by direct bonding: Towards NIR imaging system",
abstract = "We report a high efficiency normal incidence coupling Ge/Si photodiode formed by direct bonding. The devices exhibit high responsivity up to ∼12A/W at 1.54μm and are suitable for imaging applications. We attribute the enhanced gain to surface trap states between Ge and Si.",
keywords = "Direct-bonding, Germanium, heterojunction, photodiode, Silicon",
author = "N. Hattasan and N. Ye and B. Corbett",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Photonics Conference, IPC 2015 ; Conference date: 30-08-2015 Through 31-08-2015",
year = "2015",
month = nov,
day = "9",
doi = "10.1109/IPCon.2015.7323621",
language = "English",
series = "2015 IEEE Photonics Conference, IPC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "448--449",
booktitle = "2015 IEEE Photonics Conference, IPC 2015",
address = "United States",
}