Tunable Schottky barrier contacts to inxGa1-xas

C. Marinelli; L. Sorba; M. Lazzarino; D. Kumar; E. Pelucchi; B. H. Müller; D. Orani; S. Rubini; A. Franciosi; S. De Franceschi; F. Beltram

Tunable Schottky barrier contacts to in_xGa_1-xas

C. Marinelli
, L. Sorba
, M. Lazzarino
, D. Kumar
, E. Pelucchi
, B. H. Müller
, D. Orani
, S. Rubini
, A. Franciosi
, S. De Franceschi
, F. Beltram

Research output: Contribution to journal › Article › peer-review

Abstract

Al/In_xGa_1-xAs(001) diodes incorporating Si bilayers deposited under As or Al flux were fabricated by molecular-beam epitaxy on GaAs(001) wafers for 0.2<x<0.4. Schottky barrier heights as high as 0.75 eV and as low as -0.10 eV could be reproducibly obtained. Diodes engineered for high barrier height systematically showed a higher thermal stability than low-barrier diodes. We discuss the composition dependence of the barrier height and the observed degradation behavior vis-a-vis of the predictions of the interface-dipole model of Schottky barrier tuning.

Original language	English
Pages (from-to)	2119-2127
Number of pages	9
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	4
Publication status	Published - 2000
Externally published	Yes

Cite this

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title = "Tunable Schottky barrier contacts to inxGa1-xas",

abstract = "Al/InxGa1-xAs(001) diodes incorporating Si bilayers deposited under As or Al flux were fabricated by molecular-beam epitaxy on GaAs(001) wafers for 0.2",

author = "C. Marinelli and L. Sorba and M. Lazzarino and D. Kumar and E. Pelucchi and M{\"u}ller, \{B. H.\} and D. Orani and S. Rubini and A. Franciosi and \{De Franceschi\}, S. and F. Beltram",

year = "2000",

language = "English",

volume = "18",

pages = "2119--2127",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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number = "4",

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TY - JOUR

T1 - Tunable Schottky barrier contacts to inxGa1-xas

AU - Marinelli, C.

AU - Sorba, L.

AU - Lazzarino, M.

AU - Kumar, D.

AU - Pelucchi, E.

AU - Müller, B. H.

AU - Orani, D.

AU - Rubini, S.

AU - Franciosi, A.

AU - De Franceschi, S.

AU - Beltram, F.

PY - 2000

Y1 - 2000

N2 - Al/InxGa1-xAs(001) diodes incorporating Si bilayers deposited under As or Al flux were fabricated by molecular-beam epitaxy on GaAs(001) wafers for 0.2

AB - Al/InxGa1-xAs(001) diodes incorporating Si bilayers deposited under As or Al flux were fabricated by molecular-beam epitaxy on GaAs(001) wafers for 0.2

UR - https://www.scopus.com/pages/publications/23044524348

M3 - Article

AN - SCOPUS:23044524348

SN - 1071-1023

VL - 18

SP - 2119

EP - 2127

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Tunable Schottky barrier contacts to in_xGa_1-xas

Abstract

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