Two-bandgap semiconductor optical amplifier integrated using quantum well intermixing

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

We propose and fabricate a two-bandgap SOA device integrated monolithically using a quantum well intermixing technique on an AlInGaAs-based multiple quantum well structure. With increased current injection into the wide bandgap section, the gain peak wavelength shows a shift to the blue and the gain at shorter wavelengths is significantly enhanced. The 3-dB gain bandwidth is extended with this two-bandgap SOA device, demonstrating the potential for realisation of wide bandwidth SOAs. Moreover, it is found that saturation output power depends on the direction of propagation, which may arise from a lower differential gain and/or a shorter carrier lifetime in the wide bandgap section.

Original languageEnglish
Title of host publication2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Publication statusPublished - 2011
Event2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany
Duration: 22 May 201126 May 2011

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Country/TerritoryGermany
CityBerlin
Period22/05/1126/05/11

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