Two-dimensional carrier density distribution inside a high power tapered laser diode

R. Pagano; M. Ziegler; J. W. Tomm; I. Esquivias; J. M.G. Tijero; J. R. O'Callaghan; N. Michel; M. Krakowski; B. Corbett

doi:10.1063/1.3596445

Two-dimensional carrier density distribution inside a high power tapered laser diode

R. Pagano
, M. Ziegler
, J. W. Tomm
, I. Esquivias
, J. M.G. Tijero
, J. R. O'Callaghan
, N. Michel
, M. Krakowski
, B. Corbett

Research output: Contribution to journal › Article › peer-review

Abstract

The spontaneous emission of a GaAs-based tapered laser diode emitting at λ=1060 nm was measured through a window in the transparent substrate in order to study the carrier density distribution inside the device. It is shown that the tapered geometry is responsible for nonuniform amplification of the spontaneous/stimulated emission which in turn influences the spatial distribution of the carriers starting from below threshold. The carrier density does not clamp at the lasing threshold and above it the device shows lateral spatial hole-burning caused by high stimulated emission along the cavity center.

Original language	English
Article number	221110
Journal	Applied Physics Letters
Volume	98
Issue number	22
DOIs	https://doi.org/10.1063/1.3596445
Publication status	Published - 30 May 2011

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10.1063/1.3596445

https://hdl.handle.net/10468/4320Licence: CC BY-NC-ND

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title = "Two-dimensional carrier density distribution inside a high power tapered laser diode",

abstract = "The spontaneous emission of a GaAs-based tapered laser diode emitting at λ=1060 nm was measured through a window in the transparent substrate in order to study the carrier density distribution inside the device. It is shown that the tapered geometry is responsible for nonuniform amplification of the spontaneous/stimulated emission which in turn influences the spatial distribution of the carriers starting from below threshold. The carrier density does not clamp at the lasing threshold and above it the device shows lateral spatial hole-burning caused by high stimulated emission along the cavity center.",

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AU - Pagano, R.

AU - Ziegler, M.

AU - Tomm, J. W.

AU - Esquivias, I.

AU - Tijero, J. M.G.

AU - O'Callaghan, J. R.

AU - Michel, N.

AU - Krakowski, M.

AU - Corbett, B.

PY - 2011/5/30

Y1 - 2011/5/30

N2 - The spontaneous emission of a GaAs-based tapered laser diode emitting at λ=1060 nm was measured through a window in the transparent substrate in order to study the carrier density distribution inside the device. It is shown that the tapered geometry is responsible for nonuniform amplification of the spontaneous/stimulated emission which in turn influences the spatial distribution of the carriers starting from below threshold. The carrier density does not clamp at the lasing threshold and above it the device shows lateral spatial hole-burning caused by high stimulated emission along the cavity center.

AB - The spontaneous emission of a GaAs-based tapered laser diode emitting at λ=1060 nm was measured through a window in the transparent substrate in order to study the carrier density distribution inside the device. It is shown that the tapered geometry is responsible for nonuniform amplification of the spontaneous/stimulated emission which in turn influences the spatial distribution of the carriers starting from below threshold. The carrier density does not clamp at the lasing threshold and above it the device shows lateral spatial hole-burning caused by high stimulated emission along the cavity center.

UR - https://www.scopus.com/pages/publications/79958851494

U2 - 10.1063/1.3596445

DO - 10.1063/1.3596445

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SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221110

ER -

Two-dimensional carrier density distribution inside a high power tapered laser diode

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