@inproceedings{637a4bdc2cbc4aada47d5dafc3e2ed64,
title = "Ultrafast dynamic switching between two lasing states in quantum dot lasers",
abstract = "The unique carrier processes in quantum dot lasers mean that lasing can be achieved at the ground state (GS) transition wavelength or at the excited state (ES) transmission wavelength or indeed simultaneously at both wavelengths. The details depend on the device characteristics and control parameters such as the pumping current and temperature. When the lasing is from the ES only one can induce all-optical switching between the two states via optical injection into the GS. The high damping of the relaxation oscillations in these devices allows for very fast switching times, with sub-nanosecond transitions easily obtained. Such ultrafast switching times are vastly superior to those obtained with conventional semiconductor lasers and make these devices very attractive for all-optical switching applications. The interplay of the two states leads to a new dynamic regime. Near the boundary of stable locking for the injected GS, deep GS intensity dropouts are observed. Further, each dropout in the GS coincides with a burst in the ES output.",
keywords = "all-optical signal processing, laser dynamics, Quantum dots, switching, two-state lasing",
author = "Boguslaw Tykalewicz and David Goulding and Hegarty, \{Stephen P.\} and Guillaume Huyet and Viktorov, \{Evgeny A.\} and Bryan Kelleher",
note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; 23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices ; Conference date: 09-02-2015 Through 12-02-2015",
year = "2015",
doi = "10.1117/12.2078973",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Bernd Witzigmann and Yasuhiko Arakawa and Fritz Henneberger and Marek Osinski",
booktitle = "Physics and Simulation of Optoelectronic Devices XXIII",
address = "United States",
}