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Unpinned Interface between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In 0.53Ga0.47As (001)

  • Byungha Shin
  • , Jol Cagnon
  • , Rathnait D. Long
  • , Paul K. Hurley
  • , Susanne Stemmer
  • , Paul C. McIntyre
  • Stanford University
  • University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

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