Use of quantitative EELS and cathodoluminescence for study of carrier confinement and diffusion in self organized vertical quantum wells

K. Leifer; S. Mautino; H. Weman; A. Rudra; E. Pelucchi; F. Bobard; A. Wyser; E. Kapon

Use of quantitative EELS and cathodoluminescence for study of carrier confinement and diffusion in self organized vertical quantum wells

K. Leifer
, S. Mautino
, H. Weman
, A. Rudra
, E. Pelucchi
, F. Bobard
, A. Wyser
, E. Kapon

Research output: Contribution to journal › Article › peer-review

Abstract

When A_xGa_1-xAs layers are grown on V-grooved GaAs substrates by metal organic chemical vapour deposition (MOCVD), a Ga rich vertical quantum well (VQW) appears in the V-groove centre. The width and Ga enrichment of this structure depend on the nominal Al concentration and growth temperature. From EELS linescans and spectrum images, concentration profiles and maps of VQWs are obtained, and a subsequent bandstructure calculation shows up to three confined sublevels in the VQW. Carrier confinement in segments of modulated VQWs is demonstrated. In interconnected VQW-quantum wire structures, carrier diffusion channels were assessed by cathodoluminescence. Carrier capture into the VQW and transfer into the QWR was observed.

Original language	English
Pages (from-to)	131-134
Number of pages	4
Journal	Design and Nature
Volume	6
Publication status	Published - 2004
Externally published	Yes
Event	Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece Duration: 28 Jun 2004 → 30 Jun 2004

Cite this

@article{d9dedcf05ab04ca2adce68063eb9a1a0,

title = "Use of quantitative EELS and cathodoluminescence for study of carrier confinement and diffusion in self organized vertical quantum wells",

abstract = "When AxGa1-xAs layers are grown on V-grooved GaAs substrates by metal organic chemical vapour deposition (MOCVD), a Ga rich vertical quantum well (VQW) appears in the V-groove centre. The width and Ga enrichment of this structure depend on the nominal Al concentration and growth temperature. From EELS linescans and spectrum images, concentration profiles and maps of VQWs are obtained, and a subsequent bandstructure calculation shows up to three confined sublevels in the VQW. Carrier confinement in segments of modulated VQWs is demonstrated. In interconnected VQW-quantum wire structures, carrier diffusion channels were assessed by cathodoluminescence. Carrier capture into the VQW and transfer into the QWR was observed.",

author = "K. Leifer and S. Mautino and H. Weman and A. Rudra and E. Pelucchi and F. Bobard and A. Wyser and E. Kapon",

year = "2004",

language = "English",

volume = "6",

pages = "131--134",

journal = "Design and Nature",

issn = "1478-0585",

publisher = "WITPress",

note = "Design and Nature II: Comparing Design in Nature with Science and Engineering ; Conference date: 28-06-2004 Through 30-06-2004",

}

TY - JOUR

T1 - Use of quantitative EELS and cathodoluminescence for study of carrier confinement and diffusion in self organized vertical quantum wells

AU - Leifer, K.

AU - Mautino, S.

AU - Weman, H.

AU - Rudra, A.

AU - Pelucchi, E.

AU - Bobard, F.

AU - Wyser, A.

AU - Kapon, E.

PY - 2004

Y1 - 2004

N2 - When AxGa1-xAs layers are grown on V-grooved GaAs substrates by metal organic chemical vapour deposition (MOCVD), a Ga rich vertical quantum well (VQW) appears in the V-groove centre. The width and Ga enrichment of this structure depend on the nominal Al concentration and growth temperature. From EELS linescans and spectrum images, concentration profiles and maps of VQWs are obtained, and a subsequent bandstructure calculation shows up to three confined sublevels in the VQW. Carrier confinement in segments of modulated VQWs is demonstrated. In interconnected VQW-quantum wire structures, carrier diffusion channels were assessed by cathodoluminescence. Carrier capture into the VQW and transfer into the QWR was observed.

AB - When AxGa1-xAs layers are grown on V-grooved GaAs substrates by metal organic chemical vapour deposition (MOCVD), a Ga rich vertical quantum well (VQW) appears in the V-groove centre. The width and Ga enrichment of this structure depend on the nominal Al concentration and growth temperature. From EELS linescans and spectrum images, concentration profiles and maps of VQWs are obtained, and a subsequent bandstructure calculation shows up to three confined sublevels in the VQW. Carrier confinement in segments of modulated VQWs is demonstrated. In interconnected VQW-quantum wire structures, carrier diffusion channels were assessed by cathodoluminescence. Carrier capture into the VQW and transfer into the QWR was observed.

UR - https://www.scopus.com/pages/publications/7744239538

M3 - Article

AN - SCOPUS:7744239538

SN - 1478-0585

VL - 6

SP - 131

EP - 134

JO - Design and Nature

JF - Design and Nature

T2 - Design and Nature II: Comparing Design in Nature with Science and Engineering

Y2 - 28 June 2004 through 30 June 2004

ER -

Use of quantitative EELS and cathodoluminescence for study of carrier confinement and diffusion in self organized vertical quantum wells

Abstract

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