TY - CHAP
T1 - Using TCAD Simulations to Verify the McWhorter Method for Assessing Trapped Charge in Dielectric
AU - Veljkovic, S.
AU - Ristic, G.
AU - Dankovic, D.
AU - Palma, A. J.
AU - Andjelkovic, M.
AU - Duane, R.
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023/10
Y1 - 2023/10
N2 - This study arises from the difficulty of obtaining comprehensive proprietary information from MOSFET manufacturers, which may have influenced the method's precision. To mitigate this, an irradiation experiment was conducted to estimate typical trapped charge densities. Subsequently, a MOSFET structure with thick oxide resembling experimental conditions was simulated. The McWhorter method was used with the channel doping parameter adjusted by a factor of 10 from the correct value in TCAD simulations. Notably, the smallest deviations were observed when the density of fixed traps (Nft) exceeded that of switching traps (Nst), reflecting a more realistic scenario for irradiated devices. The research explores potential future directions, including defining energy levels for switching traps, experimental procedures with varying oxide thicknesses, and 3D simulations.
AB - This study arises from the difficulty of obtaining comprehensive proprietary information from MOSFET manufacturers, which may have influenced the method's precision. To mitigate this, an irradiation experiment was conducted to estimate typical trapped charge densities. Subsequently, a MOSFET structure with thick oxide resembling experimental conditions was simulated. The McWhorter method was used with the channel doping parameter adjusted by a factor of 10 from the correct value in TCAD simulations. Notably, the smallest deviations were observed when the density of fixed traps (Nft) exceeded that of switching traps (Nst), reflecting a more realistic scenario for irradiated devices. The research explores potential future directions, including defining energy levels for switching traps, experimental procedures with varying oxide thicknesses, and 3D simulations.
UR - https://www.scopus.com/pages/publications/85183085836
U2 - 10.1109/MIEL58498.2023.10315943
DO - 10.1109/MIEL58498.2023.10315943
M3 - Chapter
AN - SCOPUS:85183085836
T3 - 2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023
BT - 2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 33rd IEEE International Conference on Microelectronics, MIEL 2023
Y2 - 16 October 2023 through 18 October 2023
ER -