Abstract
A novel technique termed UV-assisted RTP has been developed and found to offer improvement in material properties, in particular when applied to thin films. Regarding crystallization of SET, a number of UV-RTP strategies were developed and evaluated. It was demonstrated that UV irradiation of the sample material at a temperature in excess of the MOCVD deposition temperature was found to produce a significant increase in Pr.
| Original language | English |
|---|---|
| Article number | D3.18 |
| Pages (from-to) | 177-181 |
| Number of pages | 5 |
| Journal | MRS Advances |
| Volume | 830 |
| Publication status | Published - 2005 |
| Event | Materials and Processes for Nonvolatile Memories - Boston, MA, United States Duration: 30 Nov 2004 → 2 Dec 2004 |
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