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V-shaped pits formed at the GaN/AlN interface
J. Bai
, T. Wang
,
P. J. Parbrook
, I. M. Ross
, A. G. Cullis
University of Sheffield
Tianjin University
Research output
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Engineering
Threading Dislocation
100%
Dislocation Density
50%
Sapphire Substrate
25%
High Resolution
25%
Nitride
25%
Ternary Alloy
25%
Crystal Quality
25%
Buffer Layer
25%
Induced Surface
25%
Surface Termination
25%
Material Science
Aluminum Nitride
100%
Density
57%
Surface (Surface Science)
42%
Chemical Etching
14%
High-Resolution Transmission Electron Microscopy
14%
Nitride Compound
14%
Photoluminescence
14%
Sapphire
14%
Scanning Transmission Electron Microscopy
14%
Energy-Dispersive X-Ray Spectroscopy
14%
Buffer Layer
14%
Ternary Alloy
14%