Variation of Self-Seeded Germanium Nanowire Electronic Device Functionality due to Synthesis Condition Determined Surface States

Stephen Connaughton; Richard Hobbs; Olan Lotty; Justin D. Holmes; Vojislav Krstić

doi:10.1002/admi.201400469

Variation of Self-Seeded Germanium Nanowire Electronic Device Functionality due to Synthesis Condition Determined Surface States

Stephen Connaughton
, Richard Hobbs
, Olan Lotty
, Justin D. Holmes
, Vojislav Krstić

School of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

An approach to direct the intrinsic electronic transport properties of self-seeded germanium nanowires at room temperature by in situ synthesis conditions is presented. The electrical response is varied between quasi-metallic and p-type semiconductors with memristive signatures. Electron transfer between nanowire core and core-shell surface states governs both conduction regimes and a simplified developed model reproduces the main memristive features.

Original language	English
Article number	1400469
Journal	Advanced Materials Interfaces
Volume	2
Issue number	5
DOIs	https://doi.org/10.1002/admi.201400469
Publication status	Published - 1 Mar 2015

Keywords

core/shell states
electrical transport
germanium nanowires
growth conditions
memristance

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10.1002/admi.201400469

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abstract = "An approach to direct the intrinsic electronic transport properties of self-seeded germanium nanowires at room temperature by in situ synthesis conditions is presented. The electrical response is varied between quasi-metallic and p-type semiconductors with memristive signatures. Electron transfer between nanowire core and core-shell surface states governs both conduction regimes and a simplified developed model reproduces the main memristive features.",

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AU - Connaughton, Stephen

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AU - Holmes, Justin D.

AU - Krstić, Vojislav

PY - 2015/3/1

Y1 - 2015/3/1

N2 - An approach to direct the intrinsic electronic transport properties of self-seeded germanium nanowires at room temperature by in situ synthesis conditions is presented. The electrical response is varied between quasi-metallic and p-type semiconductors with memristive signatures. Electron transfer between nanowire core and core-shell surface states governs both conduction regimes and a simplified developed model reproduces the main memristive features.

AB - An approach to direct the intrinsic electronic transport properties of self-seeded germanium nanowires at room temperature by in situ synthesis conditions is presented. The electrical response is varied between quasi-metallic and p-type semiconductors with memristive signatures. Electron transfer between nanowire core and core-shell surface states governs both conduction regimes and a simplified developed model reproduces the main memristive features.

KW - core/shell states

KW - electrical transport

KW - germanium nanowires

KW - growth conditions

KW - memristance

UR - https://www.scopus.com/pages/publications/84938704479

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DO - 10.1002/admi.201400469

M3 - Article

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M1 - 1400469

ER -

Variation of Self-Seeded Germanium Nanowire Electronic Device Functionality due to Synthesis Condition Determined Surface States

Abstract

Keywords

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