Abstract
The vertical-cavity semiconductor devices with monolithically integrated detectors were investigated for the excitation and detection of fluorescence emission from a fluorophore. These devices were found to be capable to act as excitation sources in forward bias and as detectors in reverse bias mode. A resonant cavity light-emitting diode (RCLED) with an undoped GaAs layer for optical detection was realized to study the characteristics of this device. The results reveal the suitability of these devices for fluorescence spectroscopy as they provide an excitation signal and can detect the redshifted dye fluorescence.
| Original language | English |
|---|---|
| Pages (from-to) | 1889-1891 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 13 Sep 2004 |
| Externally published | Yes |
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