Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

D. L. McDaniel; J. G. McInerney; M. Y.A. Raja; C. F. Schaus; S. R.J. Brueck

doi:10.1117/12.18293

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

D. L. McDaniel
, J. G. McInerney
, M. Y.A. Raja
, C. F. Schaus
, S. R.J. Brueck

University of New Mexico

Research output: Contribution to journal › Article › peer-review

Abstract

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump thresholds as low as 11 mW, output powers as high as 27 mW at 850 nm and external differential quantum efficiencies ∼70% were observed in GaAs/AlGaAs surface-emitters, and spectral brightness of 22 times that of the pump laser were also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58% were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Original language	English
Pages (from-to)	284-291
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1219
DOIs	https://doi.org/10.1117/12.18293
Publication status	Published - 1 May 1990
Externally published	Yes
Event	Laser Diode Technology and Applications II 1990 - Los Angeles, United States Duration: 14 Jan 1990 → …

Access to Document

10.1117/12.18293

Cite this

@article{e38df8f801134a809e1204f2d719ef34,

title = "Vertical cavity surface-emitting semiconductor lasers with injection laser pumping",

abstract = "Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump thresholds as low as 11 mW, output powers as high as 27 mW at 850 nm and external differential quantum efficiencies ∼70\% were observed in GaAs/AlGaAs surface-emitters, and spectral brightness of 22 times that of the pump laser were also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58\% were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.",

author = "McDaniel, \{D. L.\} and McInerney, \{J. G.\} and Raja, \{M. Y.A.\} and Schaus, \{C. F.\} and Brueck, \{S. R.J.\}",

note = "Publisher Copyright: {\textcopyright} 2019 SPIE.; Laser Diode Technology and Applications II 1990 ; Conference date: 14-01-1990",

year = "1990",

month = may,

day = "1",

doi = "10.1117/12.18293",

language = "English",

volume = "1219",

pages = "284--291",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

AU - McDaniel, D. L.

AU - McInerney, J. G.

AU - Raja, M. Y.A.

AU - Schaus, C. F.

AU - Brueck, S. R.J.

PY - 1990/5/1

Y1 - 1990/5/1

N2 - Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump thresholds as low as 11 mW, output powers as high as 27 mW at 850 nm and external differential quantum efficiencies ∼70% were observed in GaAs/AlGaAs surface-emitters, and spectral brightness of 22 times that of the pump laser were also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58% were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

AB - Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump thresholds as low as 11 mW, output powers as high as 27 mW at 850 nm and external differential quantum efficiencies ∼70% were observed in GaAs/AlGaAs surface-emitters, and spectral brightness of 22 times that of the pump laser were also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58% were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

UR - https://www.scopus.com/pages/publications/0025636971

U2 - 10.1117/12.18293

DO - 10.1117/12.18293

M3 - Article

AN - SCOPUS:0025636971

SN - 0277-786X

VL - 1219

SP - 284

EP - 291

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Laser Diode Technology and Applications II 1990

Y2 - 14 January 1990

ER -

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

Abstract

Access to Document

Other files and links

Fingerprint

Cite this