TY - GEN
T1 - Wafer bonded Ge-Si heterostructure for avalanche photodiode application
AU - Byun, Ki Yeol
AU - Hayes, John
AU - Gity, Farzan
AU - Corbett, Brian
AU - Colinge, Cindy
PY - 2011
Y1 - 2011
N2 - In this study, we investigate directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon integration for Avalanche photodiode application. Angle resolved x-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the surface passivation. The hetero-structure is characterized by measuring forward and reverse current and comparing the measured results to TCAD simulation. The physical structure of hetero-junction is supported by high resolution transmission electron microscopy.
AB - In this study, we investigate directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon integration for Avalanche photodiode application. Angle resolved x-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the surface passivation. The hetero-structure is characterized by measuring forward and reverse current and comparing the measured results to TCAD simulation. The physical structure of hetero-junction is supported by high resolution transmission electron microscopy.
UR - https://www.scopus.com/pages/publications/84860598347
U2 - 10.1557/opl.2011.1153
DO - 10.1557/opl.2011.1153
M3 - Conference proceeding
AN - SCOPUS:84860598347
SN - 9781618395320
T3 - Materials Research Society Symposium Proceedings
SP - 38
EP - 43
BT - Interface Engineering for Post-CMOS Emerging Channel Materials
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -