Abstract
A novel integrated reflector concept for use in widely tunable semiconductor lasers is introduced. Two concatenated Fabry-Pérot cavities with low partial reflections and different cavity lengths are interleaved to realize a wavelength-selective reflective element. Differential current injection in the interleaved cavities is used to tune the reflection peak. The reflector is integrated in an all-active multisection device. The laser tunes across 37 wavelength channels on a 100-GHz grid over a wavelength span of 30 nm. The linewidth of each mode is <7 MHz while the power deviation is <6 dB.
| Original language | English |
|---|---|
| Article number | 5313880 |
| Pages (from-to) | 54-56 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 22 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2010 |
Keywords
- Interleaved reflector
- Semiconductor lasers
- Tunable lasers
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