Abstract
— This letter reports on the design and experimental testing of a new class of tunable monolithic microwave integrated circuit (MMIC)-based quasi-absorptive bandstop filters (ABSFs). An asynchronous tuning method is used to improve the design robustness and obtain an ultrahigh stopband attenuation over a wide tuning range. RF tuning is facilitated by GaAs pHEMT varactors. The proposed filter configuration exhibits the following unique features: 1) ultrahigh stopband rejection (>70 dB) despite using low quality factor lumped element (LE) resonators; 2) miniaturized footprint enabled by the GaAs MMIC process and the use of LE-based impedance inverter elements; and 3) frequency agility. An X-band filter prototype was manufactured using a commercially available GaAs process. It exhibits a high isolation notch whose center frequency can be tuned between 8.7 and 10.5 GHz while having >40-dB attenuation and a maximum attenuation of 73.6 dB.
| Original language | English |
|---|---|
| Pages (from-to) | 391-394 |
| Number of pages | 4 |
| Journal | IEEE Microwave and Wireless Technology Letters |
| Volume | 33 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1 Apr 2023 |
Keywords
- Absorptive filter
- bandstop filter (BSF)
- monolithic microwave integrated circuit (MMIC)
- tunable filter
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