X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials

S. Ferrari; M. Modreanu; G. Scarel; M. Fanciulli

doi:10.1016/j.tsf.2003.10.051

X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials

S. Ferrari
, M. Modreanu
, G. Scarel
, M. Fanciulli

National Research Council of Italy

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we investigate interface evolution upon annealing in O ₂ by means of X-ray reflectivity and spectroscopic ellipsometry on HfO₂ and ZrO₂ thin films deposited with atomic layer deposition (ALD) on Si (100). The analysis of SE data is made with a common optical model adjusting the layer thickness and the surface and interface roughness, while thickness and interface composition are extracted from XRR data by means of the matrix method. The poor electron density contrast between SiOs and Si as opposed to the strong one between HfO₂/ZrO ₂ and Si makes the extraction of structural data from XRR data extremely difficult. Information on interdiffusion phenomena occurring between the high-κ layer and the interfacial SiO₂ can be obtained, while SiO₂ growth is hardly detectable.

Original language	English
Pages (from-to)	124-127
Number of pages	4
Journal	Thin Solid Films
Volume	450
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2003.10.051
Publication status	Published - 22 Feb 2004
Event	Proceedings of Symposium M on Optical and X-Ray Metrology - Strasbourg, France Duration: 10 Jun 2003 → 13 Jun 2003

Keywords

High-k oxides
Spectroscopic ellipsometry
X-Ray reflectivity

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10.1016/j.tsf.2003.10.051

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title = "X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials",

abstract = "In this paper we investigate interface evolution upon annealing in O 2 by means of X-ray reflectivity and spectroscopic ellipsometry on HfO2 and ZrO2 thin films deposited with atomic layer deposition (ALD) on Si (100). The analysis of SE data is made with a common optical model adjusting the layer thickness and the surface and interface roughness, while thickness and interface composition are extracted from XRR data by means of the matrix method. The poor electron density contrast between SiOs and Si as opposed to the strong one between HfO2/ZrO 2 and Si makes the extraction of structural data from XRR data extremely difficult. Information on interdiffusion phenomena occurring between the high-κ layer and the interfacial SiO2 can be obtained, while SiO2 growth is hardly detectable.",

keywords = "High-k oxides, Spectroscopic ellipsometry, X-Ray reflectivity",

author = "S. Ferrari and M. Modreanu and G. Scarel and M. Fanciulli",

year = "2004",

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doi = "10.1016/j.tsf.2003.10.051",

language = "English",

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journal = "Thin Solid Films",

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number = "1",

note = "Proceedings of Symposium M on Optical and X-Ray Metrology ; Conference date: 10-06-2003 Through 13-06-2003",

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TY - JOUR

T1 - X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials

AU - Ferrari, S.

AU - Modreanu, M.

AU - Scarel, G.

AU - Fanciulli, M.

PY - 2004/2/22

Y1 - 2004/2/22

N2 - In this paper we investigate interface evolution upon annealing in O 2 by means of X-ray reflectivity and spectroscopic ellipsometry on HfO2 and ZrO2 thin films deposited with atomic layer deposition (ALD) on Si (100). The analysis of SE data is made with a common optical model adjusting the layer thickness and the surface and interface roughness, while thickness and interface composition are extracted from XRR data by means of the matrix method. The poor electron density contrast between SiOs and Si as opposed to the strong one between HfO2/ZrO 2 and Si makes the extraction of structural data from XRR data extremely difficult. Information on interdiffusion phenomena occurring between the high-κ layer and the interfacial SiO2 can be obtained, while SiO2 growth is hardly detectable.

AB - In this paper we investigate interface evolution upon annealing in O 2 by means of X-ray reflectivity and spectroscopic ellipsometry on HfO2 and ZrO2 thin films deposited with atomic layer deposition (ALD) on Si (100). The analysis of SE data is made with a common optical model adjusting the layer thickness and the surface and interface roughness, while thickness and interface composition are extracted from XRR data by means of the matrix method. The poor electron density contrast between SiOs and Si as opposed to the strong one between HfO2/ZrO 2 and Si makes the extraction of structural data from XRR data extremely difficult. Information on interdiffusion phenomena occurring between the high-κ layer and the interfacial SiO2 can be obtained, while SiO2 growth is hardly detectable.

KW - High-k oxides

KW - Spectroscopic ellipsometry

KW - X-Ray reflectivity

UR - https://www.scopus.com/pages/publications/1142291777

U2 - 10.1016/j.tsf.2003.10.051

DO - 10.1016/j.tsf.2003.10.051

M3 - Article

AN - SCOPUS:1142291777

SN - 0040-6090

VL - 450

SP - 124

EP - 127

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Proceedings of Symposium M on Optical and X-Ray Metrology

Y2 - 10 June 2003 through 13 June 2003

ER -

X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials

Abstract

Keywords

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