XPS study of homemade plasma enhanced atomic layer deposited La                         2                         O                         3                         /ZrO                         2                          bilayer thin films

Vilas Patil; Khushabu Agrawal; Viral Barhate; Sumit Patil; Ashok Mahajan

doi:10.1088/1361-6641/aaef9f

XPS study of homemade plasma enhanced atomic layer deposited La ₂ O ₃ /ZrO ₂ bilayer thin films

Vilas Patil
, Khushabu Agrawal
, Viral Barhate
, Sumit Patil
, Ashok Mahajan

North Maharashtra University

Research output: Contribution to journal › Article › peer-review

Abstract

The ZrO ₂ /La ₂ O ₃ bilayer structure has been formed on Si by using atomic layer deposition system. The ZrO ₂ /La ₂ O ₃ (ZLS) bilayer was swapped to La ₂ O ₃ /ZrO ₂ (LZS) on Si and the interface properties were investigated. The chemical compositions of deposited thin films were studied by using XPS, while surface properties were investigated by means of AFM. The shift in binding energies of both gate stacks were observed. The XPS study shows the formation of silicate at the interface of both stacks. The lower surface roughness of 0.15 nm was observed for the LZS gate stack over the ZLS gate stack. This indicates that, La ₂ O ₃ /ZrO ₂ /Si combination could be a more promising candidate for future MOS devices than that of ZrO ₂ /La ₂ O ₃ /Si.

Original language	English
Article number	034004
Journal	Semiconductor Science and Technology
Volume	34
Issue number	3
DOIs	https://doi.org/10.1088/1361-6641/aaef9f
Publication status	Published - 7 Feb 2019
Externally published	Yes

Keywords

high-k
La O
PEALD
XPS
ZrO

Access to Document

10.1088/1361-6641/aaef9f

Cite this

Patil, V., Agrawal, K., Barhate, V., Patil, S., & Mahajan, A. (2019). XPS study of homemade plasma enhanced atomic layer deposited La ₂ O ₃ /ZrO ₂ bilayer thin films Semiconductor Science and Technology, 34(3), Article 034004. https://doi.org/10.1088/1361-6641/aaef9f

Patil, Vilas ; Agrawal, Khushabu ; Barhate, Viral et al. / XPS study of homemade plasma enhanced atomic layer deposited La ₂ O ₃ /ZrO ₂ bilayer thin films In: Semiconductor Science and Technology. 2019 ; Vol. 34, No. 3.

@article{9092650ce9b14c03a477305c7f67d903,

title = " XPS study of homemade plasma enhanced atomic layer deposited La 2 O 3 /ZrO 2 bilayer thin films ",

abstract = " The ZrO 2 /La 2 O 3 bilayer structure has been formed on Si by using atomic layer deposition system. The ZrO 2 /La 2 O 3 (ZLS) bilayer was swapped to La 2 O 3 /ZrO 2 (LZS) on Si and the interface properties were investigated. The chemical compositions of deposited thin films were studied by using XPS, while surface properties were investigated by means of AFM. The shift in binding energies of both gate stacks were observed. The XPS study shows the formation of silicate at the interface of both stacks. The lower surface roughness of 0.15 nm was observed for the LZS gate stack over the ZLS gate stack. This indicates that, La 2 O 3 /ZrO 2 /Si combination could be a more promising candidate for future MOS devices than that of ZrO 2 /La 2 O 3 /Si.",

keywords = "high-k, La O, PEALD, XPS, ZrO",

author = "Vilas Patil and Khushabu Agrawal and Viral Barhate and Sumit Patil and Ashok Mahajan",

note = "Publisher Copyright: {\textcopyright} 2019 IOP Publishing Ltd.",

year = "2019",

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day = "7",

doi = "10.1088/1361-6641/aaef9f",

language = "English",

volume = "34",

journal = "Semiconductor Science and Technology",

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Patil, V, Agrawal, K, Barhate, V, Patil, S & Mahajan, A 2019, ' XPS study of homemade plasma enhanced atomic layer deposited La ₂ O ₃ /ZrO ₂ bilayer thin films ', Semiconductor Science and Technology, vol. 34, no. 3, 034004. https://doi.org/10.1088/1361-6641/aaef9f

XPS study of homemade plasma enhanced atomic layer deposited La ₂ O ₃ /ZrO ₂ bilayer thin films . / Patil, Vilas; Agrawal, Khushabu; Barhate, Viral et al.
In: Semiconductor Science and Technology, Vol. 34, No. 3, 034004, 07.02.2019.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - XPS study of homemade plasma enhanced atomic layer deposited La 2 O 3 /ZrO 2 bilayer thin films

AU - Patil, Vilas

AU - Agrawal, Khushabu

AU - Barhate, Viral

AU - Patil, Sumit

AU - Mahajan, Ashok

PY - 2019/2/7

Y1 - 2019/2/7

N2 - The ZrO 2 /La 2 O 3 bilayer structure has been formed on Si by using atomic layer deposition system. The ZrO 2 /La 2 O 3 (ZLS) bilayer was swapped to La 2 O 3 /ZrO 2 (LZS) on Si and the interface properties were investigated. The chemical compositions of deposited thin films were studied by using XPS, while surface properties were investigated by means of AFM. The shift in binding energies of both gate stacks were observed. The XPS study shows the formation of silicate at the interface of both stacks. The lower surface roughness of 0.15 nm was observed for the LZS gate stack over the ZLS gate stack. This indicates that, La 2 O 3 /ZrO 2 /Si combination could be a more promising candidate for future MOS devices than that of ZrO 2 /La 2 O 3 /Si.

AB - The ZrO 2 /La 2 O 3 bilayer structure has been formed on Si by using atomic layer deposition system. The ZrO 2 /La 2 O 3 (ZLS) bilayer was swapped to La 2 O 3 /ZrO 2 (LZS) on Si and the interface properties were investigated. The chemical compositions of deposited thin films were studied by using XPS, while surface properties were investigated by means of AFM. The shift in binding energies of both gate stacks were observed. The XPS study shows the formation of silicate at the interface of both stacks. The lower surface roughness of 0.15 nm was observed for the LZS gate stack over the ZLS gate stack. This indicates that, La 2 O 3 /ZrO 2 /Si combination could be a more promising candidate for future MOS devices than that of ZrO 2 /La 2 O 3 /Si.

KW - high-k

KW - La O

KW - PEALD

KW - XPS

KW - ZrO

UR - https://www.scopus.com/pages/publications/85064086028

U2 - 10.1088/1361-6641/aaef9f

DO - 10.1088/1361-6641/aaef9f

M3 - Article

AN - SCOPUS:85064086028

SN - 0268-1242

VL - 34

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

M1 - 034004

ER -

Patil V, Agrawal K, Barhate V, Patil S, Mahajan A. XPS study of homemade plasma enhanced atomic layer deposited La ₂ O ₃ /ZrO ₂ bilayer thin films Semiconductor Science and Technology. 2019 Feb 7;34(3):034004. doi: 10.1088/1361-6641/aaef9f

XPS study of homemade plasma enhanced atomic layer deposited La ₂ O ₃ /ZrO ₂ bilayer thin films

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Keywords

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