TY - CHAP
T1 - ZnO thin films formed from ZnN target by RF sputtering
T2 - 34th International Semiconductor Conference, CAS 2011
AU - Kampylafka, V.
AU - Kostopoulos, A.
AU - Androulidaki, M.
AU - Tsagaraki, K.
AU - Modreanu, M.
AU - Aperathitis, E.
PY - 2011
Y1 - 2011
N2 - In this work a single ZnN sputtering target was used to fabricate n-and p-type transparent films, namely: (a) n-ZnN thin films in pure Ar plasma and (b) p-ZnO:N films in Ar-O 2 plasma. The structural, optical and electrical properties of the films were investigated. Zinc nitride films deposited in pure Ar were n-type, with low resistivity. Films deposited in more than 40% O 2 in plasma were p-type ZnO films. A thin film transistor having zinc nitride as channel layer as well as n-ZnN/p-ZnO and p/n ZnO diodes in a single deposition run were fabricated and characterized.
AB - In this work a single ZnN sputtering target was used to fabricate n-and p-type transparent films, namely: (a) n-ZnN thin films in pure Ar plasma and (b) p-ZnO:N films in Ar-O 2 plasma. The structural, optical and electrical properties of the films were investigated. Zinc nitride films deposited in pure Ar were n-type, with low resistivity. Films deposited in more than 40% O 2 in plasma were p-type ZnO films. A thin film transistor having zinc nitride as channel layer as well as n-ZnN/p-ZnO and p/n ZnO diodes in a single deposition run were fabricated and characterized.
UR - https://www.scopus.com/pages/publications/84255187329
U2 - 10.1109/SMICND.2011.6095792
DO - 10.1109/SMICND.2011.6095792
M3 - Chapter
AN - SCOPUS:84255187329
SN - 9781612841717
T3 - Proceedings of the International Semiconductor Conference, CAS
SP - 279
EP - 282
BT - 2011 International Semiconductor Conference, CAS 2011 Proceedings
Y2 - 17 October 2011 through 19 October 2011
ER -