Biography

Research Grants

  Project Funding
Body 		Start Date End Date Award
Radiochemistry on Chip European Union 19-JAN-08 16-SEP-11 €436,830.00
[IST-2001-35243] {A Jaksic} V European Union 01-JUN-02 30-APR-05 €429,604.00
EU "Joint Research on Various Types of Radiation Dosimeters" European Union 01-MAY-08 30-APR-12 €84,530.00
Development of radiation sensors based on stacked RADFET technology. European Union 01-SEP-12 31-AUG-13 €133,361.00
HANDHOLD - HANDHeld OLfactory Detector European Commission 01-APR-12 30-SEP-15 €420,000.00
Development of novel radiation detectors based on RADFET Technology. Irish Research Council 01-OCT-13 30-SEP-16 €72,000.00
EI 'Development of Stacked RADFETs for Application in Personal Dosimetry' Enterprise Irl 03-SEP-07 02-SEP-08 €99,000.00
European Space Agency ESTEC 4200023059 EuCDAD Foreign Industry 01-AUG-10 31-DEC-16 €175,000.00

Peer Reviewed Journals

  Year Publication
(2009) 'Investigation of the Energy Response of RADFET for High Energy Photons, Electrons, Protons, and Neutrons'
Wind, M,Beck, P,Jaksic, A (2009) 'Investigation of the Energy Response of RADFET for High Energy Photons, Electrons, Protons, and Neutrons'. IEEE Transactions On Nuclear Science, 56 :3387-3392 [DOI] [Details]
(2006) 'RADFET response to proton irradiation under different biasing configurations'
Jaksic, A,Kimoto, Y,Mohammadzadeh, A,Hajdas, W (2006) 'RADFET response to proton irradiation under different biasing configurations'. IEEE Transactions On Nuclear Science, 53 :2004-2007 [DOI] [Details]
(2002) 'Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs'
Jaksic, A,Ristic, G,Pejovic, M,Mohammadzadeh, A,Sudre, C,Lane, W (2002) 'Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs'. IEEE Transactions On Nuclear Science, 49 :1356-1363 [Details]
(2004) 'Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs'
Haran, A,Jaksic, A,Refaeli, N,Eliyahu, A,David, D,Barak, J (2004) 'Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs'. IEEE Transactions On Nuclear Science, 51 :2917-2921 [DOI] [Details]
(2013) 'Radiochemistry on chip: towards dose-on-demand synthesis of PET radiopharmaceuticals'
Arima, V,Pascali, G,Lade, O,Kretschmer, HR,Bernsdorf, I,Hammond, V,Watts, P,De Leonardis, F,Tarn, MD,Pamme, N,Cvetkovic, BZ,Dittrich, PS,Vasovic, N,Duane, R,Jaksic, A,Zacheo, A,Zizzari, A,Marra, L,Perrone, E,Salvadori, PA,Rinaldi, R (2013) 'Radiochemistry on chip: towards dose-on-demand synthesis of PET radiopharmaceuticals'. Lab On A Chip, 13 :2328-2336 [DOI] [Details]
(2011) 'The Technology Demonstration Module On-Board PROBA-II'
Harboe-Sorensen, R,Poivey, C,Fleurinck, N,Puimege, K,Zadeh, A,Guerre, FX,Lochon, F,Kaddour, M,Li, L,Walter, D,Keating, A,Jaksic, A,Poizat, M (2011) 'The Technology Demonstration Module On-Board PROBA-II'. IEEE Transactions On Nuclear Science, 58 :1001-1007 [DOI] [Details]
(2009) 'Heavy-ion induced charge yield in MOSFETs'
[10] A. Javanainen, J.R. Schwank, M.R. Shaneyfelt, R. Harboe-Sørensen, A. Virtanen, H. Kettunen, S.M. Dalton, P.E. Dodd, A.B. Jaksic (2009) 'Heavy-ion induced charge yield in MOSFETs'. IEEE Transactions On Nuclear Science, 56 (6):3367-3371 [Details]
(2005) 'The role of fixed and switching traps in long-term fading of implanted and unimplanted gate oxide RADFETs'
Haran, A,Jaksic, A (2005) 'The role of fixed and switching traps in long-term fading of implanted and unimplanted gate oxide RADFETs'. IEEE Transactions On Nuclear Science, 52 :2570-2577 [DOI] [Details]
(2004) 'Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters'
Benson, C,Price, RA,Silvie, J,Jaksic, A,Joyce, MJ (2004) 'Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters'. Physics In Medicine and Biology, 49 :3145-3159 [DOI] [Details]
(2012) 'Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature'
Pejovic, M.M., Pejovic, M.M., Jaksic, A.B. (2012) 'Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature'. Sensors And Actuators A: Physicalsensors And Actuators A: Physical, 174 (1):85-90 [Details]
(2004) 'Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters'
Benson C, Price RA, Silvie J, Jaksic A, Joyce MJ (2004) 'Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters'. Physics in medicine and biology, 49 (14):3145-3159 [Details]
(2012) 'The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs'
Ristić, G.S., Vasović, N.D., Jakšić, A.B. (2012) 'The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs'. Journal of Physics D: Applied Physics, 45 (30) [Details]
(2013) 'Response of PMOS dosemeters on gamma-ray irradiation during its re-use'
Pejovic, M.M., Pejovic, M.M., Jaksic, A.B. (2013) 'Response of PMOS dosemeters on gamma-ray irradiation during its re-use'. Radiation Protection Dosimetry, 155 (4):394-403 [Details]
(2010) 'Response calculations for silicon-based direct-reading dosimeters for use at the international space station (ISS)'
Luszik-Bhadra, M,Beck, P,Berger, T,Jaksic, A,Latocha, M,Rollet, S,Vuotila, M,Zechner, A,Reitz, G (2010) 'Response calculations for silicon-based direct-reading dosimeters for use at the international space station (ISS)'. Radiation Measurements, 45 :1548-1552 [DOI] [Details]

Honours and Awards

  Year Title Awarding Body
2000 IEEE Third Millennium Medal IEEE Electron Devices Society