Biography

2013 - now: Post-doctoral Researcher, Tyndall National Institute, Cork, Ireland

2012: Doctor of Natural Science (Doktor der Naturwissenschaften), Institute of Solid State Physics, Technical University of Berlin, Germany

2009: Master of Science, SKKU Advanced Institute of Nano technology (SAINT), Sungkyunkwan University, South Korea

2005: Bachelor of Electronics and Telecommunications, Hanoi University of Technology, Vietnam

Research Interests

III-Nitrides: material properties and light emitting devices

Peer Reviewed Journals

  Year Publication
(2014) 'Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy'
Dinh, Duc V and Oehler, F and Zubialevich, VZ and Kappers, MJ and Alam, SN and Caliebe, M and Scholtz, F and Humphreys, CJ and Parbrook, PJ (2014) 'Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy'. Journal of Applied Physics, 116 (15) [Details]
(2014) 'Single phase (11-22) AlN grown on (10-10) sapphire by metalorganic vapour phase epitaxy'
Dinh, Duc V and Conroy, M and Zubialevich, VZ and Petkov, N and Holmes, JD and Parbrook, PJ (2014) 'Single phase (11-22) AlN grown on (10-10) sapphire by metalorganic vapour phase epitaxy'. Journal of Crystal Growth, [Details]
(2010) 'Growth of semipolar (10-1-3) InN on m-plane sapphire using MOVPE'
Dinh, Duc V and Pristovsek, M and Kremzow, R and Kneissl, M (2010) 'Growth of semipolar (10-1-3) InN on m-plane sapphire using MOVPE'. Physica Status Solidi-Rapid Research Letters, 4 (5-6):127-129 [ Publisher's Version] [DOI] [Details]
(2009) 'Synthesis and field emission properties of triangular-shaped GaN nanowires on Si (100) substrates'
Dinh, Duc V and Kang, SM and Yang, JH and Kim, S-W and Yoon, DH (2009) 'Synthesis and field emission properties of triangular-shaped GaN nanowires on Si (100) substrates'. Journal of Crystal Growth, 311 (3):495-499 [ Publisher's Version] [DOI] [Details]
(2014) 'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'
Zubialevich, Vitaly Z and Sadler, Thomas C and Dinh, Duc V and Alam, Shahab N and Li, Haoning and Pampili, Pietro and Parbrook, Peter J (2014) 'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'. Journal of Luminescence, 155 :108-111 [Details]

Other Journals

  Year Publication
(2014) 'Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers'
Skuridina, D and Dinh, DV and Pristovsek, M and Lacroix, B and Chauvat, M-P and Ruterana, P and Kneissl, M and Vogt, P (2014) 'Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers' Applied Surface Science, 307 :461-467. [Details]
(2013) 'Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal--Organic Vapor Phase Epitaxy'
Dinh, Duc V and Solopow, Sergej and Pristovsek, Markus and Kneissl, Michael (2013) 'Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal--Organic Vapor Phase Epitaxy' Japanese Journal of Applied Physics, 52 (8S) . [Details]
(2013) 'Polarity determination of polar and semipolar (112\= 2) InN and GaN layers by valence band photoemission spectroscopy'
Skuridina, D and Dinh, DV and Lacroix, B and Ruterana, P and Hoffmann, M and Sitar, Z and Pristovsek, M and Kneissl, M and Vogt, P (2013) 'Polarity determination of polar and semipolar (112\= 2) InN and GaN layers by valence band photoemission spectroscopy' Journal of Applied Physics, 114 (17) . [Details]
(2013) 'Role of nitridation on polarity and growth of InN by metal--organic vapor phase epitaxy'
Dinh, Duc V and Skuridina, D and Solopow, S and Pristovsek, M and Vogt, P and Kneissl, M (2013) 'Role of nitridation on polarity and growth of InN by metal--organic vapor phase epitaxy' Journal of Crystal Growth, 376 :17-22. [Details]
(2012) 'Growth and characterizations of semipolar (112\= 2) InN'
Dinh, Duc V and Skuridina, D and Solopow, S and Frentrup, M and Pristovsek, M and Vogt, P and Kneissl, M and Ivaldi, F and Kret, S and Szczepa\'nska, A (2012) 'Growth and characterizations of semipolar (112\= 2) InN' Journal of Applied Physics, 112 (1) . [Details]
(2012) 'Surface diffusion and layer morphology of ((11 2 2)) GaN grown by metal-organic vapor phase epitaxy'
Ploch, Simon and Wernicke, Tim and Dinh, Duc V and Pristovsek, Markus and Kneissl, Michael (2012) 'Surface diffusion and layer morphology of ((11 2 2)) GaN grown by metal-organic vapor phase epitaxy' Journal of Applied Physics, 111 (3) :033526-033526. [Details]
(2012) 'Comparison study of N-and In-polar $$0001$\$ InN layers grown by MOVPE'
Dinh, Duc V and Pristovsek, M and Solopow, S and Skuridina, D and Kneissl, M (2012) 'Comparison study of N-and In-polar $$0001$\$ InN layers grown by MOVPE' physica status solidi (c), 9 (3-4) :977-981. [Details]
(2010) 'Growth of semipolar (10$$\backslash$ bar 1$\backslash$ bar 3$) InN on m-plane sapphire using MOVPE'
Dinh, Duc V and Pristovsek, M and Kremzow, R and Kneissl, M (2010) 'Growth of semipolar (10$$\backslash$ bar 1$\backslash$ bar 3$) InN on m-plane sapphire using MOVPE' physica status solidi (RRL)-Rapid Research Letters, 4 (5-6) :127-129. [Details]
(2009) 'Synthesis of GaN nanowires and nanorods via self-growth mode control'
Kang, SM and Shin, TI and Dinh, Duc V and Yang, JH and Kim, S-W and Yoon, DH (2009) 'Synthesis of GaN nanowires and nanorods via self-growth mode control' Microelectronics Journal, 40 (2) :373-376. [Details]
(2009) 'Synthesis and field emission properties of triangular-shaped GaN nanowires on Si (100) substrates'
Dinh, Duc V and Kang, SM and Yang, JH and Kim, S-W and Yoon, DH (2009) 'Synthesis and field emission properties of triangular-shaped GaN nanowires on Si (100) substrates' Journal of Crystal Growth, 311 (3) :495-499. [Details]
(2009) 'Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth'
Yang, JH and Kang, SM and Dinh, DV and Yoon, DH (2009) 'Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth' Thin Solid Films, 517 (17) :5057-5060. [Details]
(2009) 'Size-dependent Field-emission Properties from Triangular-shapedGaN Nanostructures'
Dinh, Ducv and Yang, JH and Kang, SM and Kim, SW and Yoon, DH (2009) 'Size-dependent Field-emission Properties from Triangular-shapedGaN Nanostructures' Journal of Korean Physical Society, 55 . [Details]
(2008) 'Vertical growth of ZnO nanowires on c-Al2O3 substrate by controlling ramping rate in a vapor-phase epitaxy method'
Song, WY and Yang, JH and Dinh, DV and Shin, TI and Kang, SM and Kim, S-W and Yoon, DH (2008) 'Vertical growth of ZnO nanowires on c-Al2O3 substrate by controlling ramping rate in a vapor-phase epitaxy method' Journal of Physics and Chemistry of Solids, 69 (5) :1486-1490. [Details]

Conference Publications

  Year Publication
(2007) Nano/Micro Engineered and Molecular Systems, 2007. NEMS'07. 2nd IEEE International Conference on
Hwang, Kyoil and Dinh, Van-Duc and Lee, Suk-Han and Kim, Youn-Jea and Kim, Hun-Mo (2007) Analysis of Line width with Nano Fountain Pen Using Active Membrane Pumping Nano/Micro Engineered and Molecular Systems, 2007. NEMS'07. 2nd IEEE International Conference on , pp.759-763 [Details]

Honours and Awards

  Year Title Awarding Body
2009 Marie Curie Fellow EU

Employment

  Employer Position From / To
Tyndall National Institute Researcher 02-JAN-13 /
Technical University of Berlin Researcher 12-SEP-12 / 30-DEC-12
Technical University of Berlin Full-time research PhD 10-FEB-09 / 12-SEP-12

Education

  Year Institution Qualification Subject
2009 SKKU Advanced Institute of Nano technology (SAINT) MASTER OF SCIENCE Field emission properties of GaN nanostructures
2012 Institute of solid state physics, Technical university of Berlin Doctor in natural sciences MOVPE growth of InN and InGaN with different surface orientations

Languages

  Language Reading Writing Speaking
English Fluent Fluent Fluent

External Collaborators

  Name Organisation/ Institution Country
AG Kneissl Institute of solid state physics, Technical University of Berlin GERMANY